generic finite-element 1d reactive transport model Search Results


1d finite element model  (COMSOL Inc)
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1d Finite Element Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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semiconductor module  (COMSOL Inc)
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1d finite element analysis device model  (COMSOL Inc)
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COMSOL Inc 1d finite element analysis device model
1d Finite Element Analysis Device Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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one-dimensional finite element model comsol 3.5  (COMSOL Inc)
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One Dimensional Finite Element Model Comsol 3.5, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite element solver comsol multiphysics  (COMSOL Inc)
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COMSOL Inc finite element solver comsol multiphysics
Finite Element Solver Comsol Multiphysics, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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scaps_1d finite element device simulator  (SCAPS GmbH)
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SCAPS GmbH scaps_1d finite element device simulator
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Scaps 1d Finite Element Device Simulator, supplied by SCAPS GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite element analysis model  (COMSOL Inc)
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COMSOL Inc finite element analysis model
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element Analysis Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite element analysis model - by Bioz Stars, 2026-06
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finite element modeling comsol multiphysics  (COMSOL Inc)
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COMSOL Inc finite element modeling comsol multiphysics
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element Modeling Comsol Multiphysics, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite element 1d thermal model  (COMSOL Inc)
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COMSOL Inc finite element 1d thermal model
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element 1d Thermal Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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adina8.6  (Adina Inc)
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Adina Inc adina8.6
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Adina8.6, supplied by Adina Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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1d axial symmetric finite element method (fem)  (COMSOL Inc)
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COMSOL Inc 1d axial symmetric finite element method (fem)
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
1d Axial Symmetric Finite Element Method (Fem), supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite-element modeling  (COMSOL Inc)
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COMSOL Inc finite-element modeling
Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS <t>finite</t> <t>element</t> <t>device</t> simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.
Finite Element Modeling, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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finite-element modeling - by Bioz Stars, 2026-06
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Image Search Results


Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS finite element device simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.

Journal: Small (Weinheim an Der Bergstrasse, Germany)

Article Title: Monolithic Perovskite/Silicon Tandem Solar Cells Enabled by Multifunctional TiO x Interconnects

doi: 10.1002/smll.202500969

Figure Lengend Snippet: Current flow mechanism at the recombination junction. a) Test structure for contact resistivity measurement and b) the corresponding dark J‐V characteristics with and without a TiO x layer between the Si wafer and the SnO 2 layer. Six identical Al pads were fabricated on a substrate and measured with both forward and backward voltage scans. Note that p ‐Si was used as substrate instead of n ‐Si to characterize the hole injection from Si to TiO x /SnO 2 recombination junction. c,d) Band diagrams of the test structures c) with TiO x and d) without TiO x layer obtained by a SCAPS finite element device simulation. E C and E V denote energy levels of conduction band and valence band, respectively. E F is the Fermi level.

Article Snippet: To explain these results, device simulations were carried out for the same sample structures using the SCAPS_1D finite element device simulator.

Techniques: Injection